SB320E-G

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Comchip Technology

DIODE SCHOTTKY 20V 3A DO201AD

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Comchip Technology

DIODE SCHOTTKY 20V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SB320E-G

Capacitance @ Vr, F	250 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	500 mV

DIODE SCHOTTKY 20V 3A DO201AD

Part	Speed	Capacitance @ Vr, F	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]
Comchip Technology SB320E-G	200 mA, 500 ns	250 pF	DO-201AD	Through Hole	500 µA	Schottky	500 mV	3 A	DO-201AD, Axial	125 °C	-65 C	20 V

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General part information

Diode 20 V 3A Through Hole DO-201AD

Technical documentation and resources

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