GE17080CDA3

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GE Aerospace

SIC 2N-CH 1700V 765A MODULE

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GE Aerospace

SIC 2N-CH 1700V 765A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GE17080CDA3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	765 A
Drain to Source Voltage (Vdss)	1.7 kV
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Qg) (Max) @ Vgs	2414 nC
Input Capacitance (Ciss) (Max) @ Vds	58000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Power - Max [Max]	2350 W
Rds On (Max) @ Id, Vgs	2.23 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

SIC 2N-CH 1700V 765A MODULE

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Configuration	Power - Max [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology
GE Aerospace GE17080CDA3	58000 pF	Module	2 N-Channel (Half Bridge)	2350 W	4.5 V	2414 nC	Chassis Mount	150 °C	-55 °C	1.7 kV	1700 V	Module	2.23 mOhm	765 A	Silicon Carbide (SiC)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1700V (1.7kV) 765A 2350W Chassis Mount Module

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