Specification	S1M0060065B

Current - Continuous Drain (Id) (Tc)	48 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	62.5 nC
Input Capacitance (Ciss) (Max)	1660 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	D2PAK, TO-263-7
Power Dissipation (Max)	238 W
Rds On (Max)	79 Ohm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	18 V
Vgs(th) (Max)	4 V

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