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Package Image for SOT23

2N7002Q-7-F

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Package Image for SOT23

2N7002Q-7-F

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Find alt

Description

General part information

2N7002Q-7-F

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Technical Specifications

Parameters and characteristics for this part

Specification2N7002Q-7-F
Current - Continuous Drain (Id) (Ta)170 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)0.233 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)50 pF, 50 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)370 mW
QualificationAEC-Q101
Rds On (Max)5 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part

    2N7002Q-7-F | Diodes Inc | Zenode.ai