TPAR3D S1G
ActiveTaiwan Semiconductor Corporation
DIODE AVALANCHE 200V 3A TO277A
TPAR3D S1G
ActiveTaiwan Semiconductor Corporation
DIODE AVALANCHE 200V 3A TO277A
Description
General part information
TPAR3D S1G
DIODE AVALANCHE 200V 3A TO277A
Technical Specifications
Parameters and characteristics for this part
| Specification | TPAR3D S1G |
|---|---|
| Capacitance | 58 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Package Name | TO-277A (SMPC) |
| Reverse Recovery Time (trr) | 120 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 1.55 V |
Pricing
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CAD
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