S12MC V7G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 12A DO214AB

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 12A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S12MC V7G

Capacitance @ Vr, F	78 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology
Taiwan Semiconductor Corporation S12MC V7G	1.1 V	78 pF	Standard Recovery >500ns	200 mA	1000 V	1 µA	DO-214AB (SMC)	Surface Mount	DO-214AB SMC	150 °C	-55 °C	12 A	Standard

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General part information

Diode 1000 V 12A Surface Mount DO-214AB (SMC)

Technical documentation and resources