SQJQ114EL-T1_GE3
ActiveVishay Dale
N-CHANNEL 100-V (D-S) 175C MOSFE
SQJQ114EL-T1_GE3
ActiveVishay Dale
N-CHANNEL 100-V (D-S) 175C MOSFE
Description
General part information
SQJQ114EL-T1_GE3
N-CHANNEL 100-V (D-S) 175C MOSFE
Technical Specifications
Parameters and characteristics for this part
| Specification | SQJQ114EL-T1_GE3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 136 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 158 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 9000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® 8 x 8 |
| Package Length | 8 mm |
| Package Name | PowerPAK® |
| Package Width | 8 mm |
| Power Dissipation (Max) | 277 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 5.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.4 V |
Pricing
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