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Description

General part information

TW140Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 14

Technical Specifications

Parameters and characteristics for this part

SpecificationTW140Z120C,S1F
Current - Continuous Drain (Id) (Tc)20 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)24 nC, 24 nC
Input Capacitance (Ciss) (Max)691 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-247-4
Package NameTO-247-4L(X)
Power Dissipation (Max)107 W
Rds On (Max)191 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive25 V
Vgs(th) (Max)5 V

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