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1N60G

1N60G

Active
UMW

SOT-223 N-CHANNEL POWER MOSFETS

1N60G

1N60G

Active
UMW

SOT-223 N-CHANNEL POWER MOSFETS

Description

General part information

1N60G

N-Channel 600 V 1A (Tj) Surface Mount SOT-223

Technical Specifications

Parameters and characteristics for this part

Specification1N60G
Current - Continuous Drain (Id) (Tj)1 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)4.8 nC
Input Capacitance (Ciss) (Max)150 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223
Rds On (Max)11 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

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