SUM55P06-19L-E3

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 60V 55A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 60V 55A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM55P06-19L-E3

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W, 3.75 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Technology	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SUM55P06-19L-E3	4.5 V 10 V	Surface Mount	3.75 W 125 W	MOSFET (Metal Oxide)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	115 nC	60 V	3 V	19 mOhm	-55 °C	175 ░C	P-Channel	TO-263 (D2PAK)	3500 pF	55 A

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General part information

P-Channel 60 V 55A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources