ZDX080N50

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Rohm Semiconductor

MOSFET N-CH 500V 8A TO220FM

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Rohm Semiconductor

MOSFET N-CH 500V 8A TO220FM

Technical Specifications

Parameters and characteristics for this part

Specification	ZDX080N50

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1120 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

MOSFET N-CH 500V 8A TO220FM

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Rohm Semiconductor ZDX080N50	1120 pF	TO-220FM	N-Channel	40 W	30 V	10 V	8 A	TO-220-3 Full Pack	Through Hole	23 nC	150 °C	MOSFET (Metal Oxide)	850 mOhm	500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 8A (Tc) 40W (Tc) Through Hole TO-220FM

Technical documentation and resources

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