FDMS86252L
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 150 V, 12 A, 0.046 OHM, POWER 56, SURFACE MOUNT
FDMS86252L
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 150 V, 12 A, 0.046 OHM, POWER 56, SURFACE MOUNT
Description
General part information
FDMS86252L
This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS86252L |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.4 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 21 nC |
| Input Capacitance (Ciss) (Max) | 1335 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 5 mm |
| Package Name | 8-PQFN |
| Package Width | 6 mm |
| Power Dissipation (Max) | 2.5 W, 50 W |
| Rds On (Max) | 56 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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