BCP68TA

Obsolete

Diodes Inc

POWER BIPOLAR TRANSISTOR, 1A I(C), 20V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN

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Obsolete

Diodes Inc

POWER BIPOLAR TRANSISTOR, 1A I(C), 20V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BCP68TA

Current - Collector (Ic) (Max) [Max]	1 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Frequency - Transition	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Diodes Inc BCP68TA	NPN	-55 °C	150 °C	TO-261-4 TO-261AA	1 A	20 V	2 W	500 mV	SOT-223-3	100 MHz	Surface Mount	63

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 20 V 1 A 100MHz 2 W Surface Mount SOT-223-3

Technical documentation and resources

No documents available