TN0110N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 3.0 OHM
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TN0110N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 3.0 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN0110N3-G | TN0110 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 350 mA | 350 mA |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF | 60 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 1 W | 1 W |
| Rds On (Max) @ Id, Vgs | 3 Ohm | 3 Ohm |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 1.26 | |
| 25 | $ 1.05 | |||
| 100 | $ 0.95 | |||
| Microchip Direct | BAG | 1 | $ 1.26 | |
| 25 | $ 1.05 | |||
| 100 | $ 0.95 | |||
| 1000 | $ 0.79 | |||
| 5000 | $ 0.73 | |||
| 10000 | $ 0.68 | |||
TN0110 Series
MOSFET, N-Channel Enhancement-Mode, 100V, 3.0 Ohm
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | Power Dissipation (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN0110N3-G | 60 pF | 2 V | Through Hole | 1 W | 20 V | 100 V | TO-92-3 | MOSFET (Metal Oxide) | 3 Ohm | 350 mA | TO-226-3, TO-92-3 | -55 °C | 150 °C | 4.5 V, 10 V | N-Channel |
Microchip Technology TN0110N3-G | |||||||||||||||
Microchip Technology TN0110N3-G-P002 | 60 pF | 2 V | Through Hole | 1 W | 20 V | 100 V | TO-92-3 | MOSFET (Metal Oxide) | 3 Ohm | 350 mA | TO-226-3, TO-92-3 | -55 °C | 150 °C | 4.5 V, 10 V | N-Channel |
Description
General part information
TN0110 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources