S5D V7G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO214AB

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S5D V7G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Mounting Type	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation S5D R7G	Surface Mount	DO-214AB SMC	Standard	200 V	Standard Recovery >500ns	200 mA	1.15 V	150 °C	-55 °C	60 pF	DO-214AB (SMC)	1500 ns	5 A	10 µA
Taiwan Semiconductor Corporation S5D V7G	Surface Mount	DO-214AB SMC	Standard	200 V	Standard Recovery >500ns	200 mA	1.15 V	150 °C	-55 °C	60 pF	DO-214AB (SMC)	1500 ns	5 A	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 5A Surface Mount DO-214AB (SMC)

Technical documentation and resources