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DMT67M8LCGQ-13

DMT67M8LCGQ-13

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Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT67M8LCGQ-13

DMT67M8LCGQ-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMT67M8LCGQ-13

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT67M8LCGQ-13
Current - Continuous Drain (Id) (Ta)16 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)37.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2130 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package NameV-DFN3333-8 (Type B)
Power Dissipation (Max)900 mW
QualificationAEC-Q101
Rds On (Max)5.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part