STW70N60DM6

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STMicroelectronics

N-CHANNEL 600 V, 36 MOHM TYP., 62 A MDMESH DM6 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsDatasheet AN4337 +24

STW70N60DM6

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STMicroelectronics

N-CHANNEL 600 V, 36 MOHM TYP., 62 A MDMESH DM6 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsDatasheet AN4337 +24

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW70N60DM6	STW70 Series

Current - Continuous Drain (Id) @ 25°C	62 A	62 - 63 A
Drain to Source Voltage (Vdss)	600 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	-	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	117 nC
Input Capacitance (Ciss) (Max) @ Vds	-	5140 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	-	446 W
Rds On (Max) @ Id, Vgs	-	46 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	-	4 V

STW70 Series

N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package

Part	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)
STMicroelectronics STW70N60DM6	MOSFET (Metal Oxide)	TO-247-3	600 V	62 A	Through Hole	25 V	N-Channel	TO-247-3
STMicroelectronics STW70N65M2	MOSFET (Metal Oxide)	TO-247-3	650 V	63 A	Through Hole	25 V	N-Channel	TO-247-3	117 nC	46 mOhm	5140 pF	-55 °C	150 °C	10 V	4 V	446 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 12.74
		10	$ 9.25
		100	$ 7.90
		600	$ 6.31

Description

General part information

STW70 Series

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

STW70N60DM6

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STW70N60DM6

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Technical Specifications

STW70 Series

Pricing

Description

STW70 Series

Documents

Datasheet

AN4337

AN4250

AN5964

AN2842

UM1575

TN1224

TN1156

TN1378

AN5427

DS12274

TN1225

AN2344

Technical Specifications

STW70 Series