Specification	SI8821EDB-T2-E1

Current - Continuous Drain (Id) (Ta)	1.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	17 nC
Input Capacitance (Ciss) (Max)	440 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	500 mW
Rds On (Max)	135 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.3 V

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