
1F6
ActiveSMC Diode Solutions
DIODE GEN PURP 800V 1A R-1
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1F6
ActiveSMC Diode Solutions
DIODE GEN PURP 800V 1A R-1
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1F6 |
|---|---|
| Capacitance @ Vr, F | 15 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | R-1, Axial |
| Reverse Recovery Time (trr) | 500 ns |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | R-1 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Box (TB) | 50000 | $ 0.03 | |
| 125000 | $ 0.03 | |||
Description
General part information
- Series
Diode 800 V 1A Through Hole R-1
Documents
Technical documentation and resources