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1F6 - R-1

1F6

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SMC Diode Solutions

DIODE GEN PURP 800V 1A R-1

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1F6 - R-1

1F6

Active
SMC Diode Solutions

DIODE GEN PURP 800V 1A R-1

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1F6
Capacitance @ Vr, F15 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseR-1, Axial
Reverse Recovery Time (trr)500 ns
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageR-1
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Box (TB) 50000$ 0.03
125000$ 0.03

Description

General part information

- Series

Diode 800 V 1A Through Hole R-1

Documents

Technical documentation and resources