2N3906,116

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NXP USA Inc.

TRANS PNP 40V 0.2A TO92-3

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Active

NXP USA Inc.

TRANS PNP 40V 0.2A TO92-3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2N3906,116	2N39 Series

Current - Collector (Ic) (Max) [Max]	200 mA	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100	100
Frequency - Transition	250 MHz	250 - 300 MHz
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3
Power - Max [Max]	500 mW	500 mW
Supplier Device Package	TO-92-3	TO-92-3
Transistor Type	PNP	NPN, PNP
Vce Saturation (Max) @ Ib, Ic	200 mV	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V	40 V

TRANS NPN 40V 0.2A TO92-3

Part	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type
NXP USA Inc. 2N3904,412	TO-226-3, TO-92-3	TO-92-3	200 mA	150 °C	100	50 nA	NPN	40 V	500 mW	200 mV	300 MHz	Through Hole
NXP USA Inc. 2N3906,116	TO-226-3, TO-92-3	TO-92-3	200 mA	150 °C	100	50 nA	PNP	40 V	500 mW	200 mV	250 MHz	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 500 mW Through Hole TO-92-3

Technical documentation and resources