Zenode.ai Logo
Log InSign Up
A1N4007G-G - DO-41

A1N4007G-G

Active
Comchip Technology

DIODE GEN PURP 1KV 1A DO41

Deep-Dive with AI

Search across all available documentation for this part.

A1N4007G-G - DO-41

A1N4007G-G

Active
Comchip Technology

DIODE GEN PURP 1KV 1A DO41

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationA1N4007G-G
Capacitance @ Vr, F10 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]125 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-204AL, DO-41, Axial
QualificationAEC-Q101
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-41
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.34
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
Tape & Box (TB) 5000$ 0.05
10000$ 0.04
25000$ 0.04
50000$ 0.04
125000$ 0.03

A1N4007 Series

DIODE GEN PURP 1KV 1A DO41

PartQualificationPackage / CaseSupplier Device PackageVoltage - DC Reverse (Vr) (Max) [Max]Current - Reverse Leakage @ VrCapacitance @ Vr, FOperating Temperature - Junction [Min]Operating Temperature - Junction [Max]SpeedSpeedTechnologyCurrent - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfMounting TypeGrade
Comchip Technology
A1N4007G-G
AEC-Q101
Axial, DO-204AL, DO-41
DO-41
1000 V
5 µA
10 pF
-55 °C
125 °C
Standard Recovery >500ns
200 mA
Standard
1 A
1.1 V
Through Hole
Automotive

Description

General part information

A1N4007 Series

Diode 1000 V 1A Through Hole DO-41

Documents

Technical documentation and resources

No documents available