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IXTA1N100P-TRL

IXTA1N100P-TRL

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LITTELFUSE

MOSFET N-CH 1000V 1A TO263

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IXTA1N100P-TRL

IXTA1N100P-TRL

Active
LITTELFUSE

MOSFET N-CH 1000V 1A TO263

Find alt

Description

General part information

IXTA1N100P-TRL

MOSFET N-CH 1000V 1A TO263

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA1N100P-TRL
Current - Continuous Drain (Id) (Tc)1 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)15.5 nC
Input Capacitance (Ciss) (Max)331 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)50 W
Rds On (Max)15 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

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Documents

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