1N5226B-G
ActiveComchip Technology
DIODE ZENER 3.3V 500MW DO35
Deep-Dive with AI
Search across all available documentation for this part.
1N5226B-G
ActiveComchip Technology
DIODE ZENER 3.3V 500MW DO35
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5226B-G |
|---|---|
| Current - Reverse Leakage @ Vr | 25 µA |
| Impedance (Max) (Zzt) [Max] | 28 Ohms |
| Mounting Type | Through Hole |
| Package / Case | Axial, DO-35, DO-204AH |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | DO-35 |
| Tolerance | 5 % |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
| Voltage - Zener (Nom) (Vz) | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
1N5226 Series
DIODE ZENER 3.3V 500MW DO35
| Part | Tolerance | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Package / Case | Impedance (Max) (Zzt) [Max] | Supplier Device Package | Current - Reverse Leakage @ Vr | Power - Max [Max] | Voltage - Zener (Nom) (Vz) |
|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 1N5226B-G | 5 % | 1.1 V | Through Hole | Axial, DO-204AH, DO-35 | 28 Ohms | DO-35 | 25 µA | 500 mW | 3.3 V |
Description
General part information
1N5226 Series
Zener Diode 3.3 V 500 mW ±5% Through Hole DO-35
Documents
Technical documentation and resources
No documents available