SF803GHC0G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 8A TO220AB

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 8A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SF803GHC0G

Capacitance @ Vr, F	70 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Grade	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed	Package / Case	Supplier Device Package	Qualification	Current - Reverse Leakage @ Vr	Technology	Mounting Type
Taiwan Semiconductor Corporation SF803GHC0G	150 °C	-55 °C	975 mV	Automotive	8 A	35 ns	70 pF	200 mA 500 ns	TO-220-3	TO-220AB	AEC-Q101	10 µA	Standard	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 150 V 8A Through Hole TO-220AB

Technical documentation and resources

No documents available