SF1606G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 16A TO220AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 16A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SF1606G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Grade	Qualification
Taiwan Semiconductor Corporation SF1606G	200 mA 500 ns	150 °C	-55 °C	TO-220AB	16 A	10 µA	400 V	Standard	60 pF	1.3 V	Through Hole	TO-220-3	35 ns
Taiwan Semiconductor Corporation SF1606GH	200 mA 500 ns	150 °C	-55 °C	TO-220AB		10 µA	400 V	Standard		1.3 V	Through Hole	TO-220-3	35 ns	1 Pair Common Cathode	16 A	Automotive	AEC-Q101
Taiwan Semiconductor Corporation SF1606PT	200 mA 500 ns	150 °C	-55 °C	TO-247AD (TO-3P)	16 A	10 µA	400 V	Standard	85 pF	1.3 V	Through Hole	TO-247-3	35 ns

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General part information

Diode 400 V 16A Through Hole TO-220AB

Technical documentation and resources