UFT10010
ObsoleteGeneSiC Semiconductor
DIODE MODULE GP 100V 50A TO249AB
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UFT10010
ObsoleteGeneSiC Semiconductor
DIODE MODULE GP 100V 50A TO249AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | UFT10010 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 50 A |
| Current - Reverse Leakage @ Vr | 25 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-249AB |
| Reverse Recovery Time (trr) | 60 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-249AB |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
UFT10010
Diode Array 1 Pair Common Cathode 100 V 50A Chassis Mount TO-249AB
Documents
Technical documentation and resources
No documents available