
BYV32E-200PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE ARRAY GP 200V 10A TO220AB
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BYV32E-200PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE ARRAY GP 200V 10A TO220AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYV32E-200PQ | 
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A | 
| Current - Reverse Leakage @ Vr | 5 µA | 
| Diode Configuration | 1 Pair Common Cathode | 
| Mounting Type | Through Hole | 
| Operating Temperature - Junction [Max] | 175 °C | 
| Package / Case | TO-220-3 | 
| Reverse Recovery Time (trr) | 25 ns | 
| Speed | 200 mA, 500 ns | 
| Supplier Device Package | TO-220AB | 
| Technology | Standard | 
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V | 
| Voltage - Forward (Vf) (Max) @ If | 850 mV | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 6000 | $ 0.52 | |
Description
General part information
BYV32 Series
Diode Array 1 Pair Common Cathode 200 V 10A Through Hole TO-220-3
Documents
Technical documentation and resources
No documents available