NXH020U90MNF2PTG
ActiveSILICON CARBIDE MOSFET, HALF-BRIDGE MODULE, DUAL N CHANNEL, 149 A, 900 V, 0.01003 OHM, MODULE
NXH020U90MNF2PTG
ActiveSILICON CARBIDE MOSFET, HALF-BRIDGE MODULE, DUAL N CHANNEL, 149 A, 900 V, 0.01003 OHM, MODULE
Description
General part information
NXH020U90MNF2PTG
The NXH020U90MNF2 is a Vienna SiC Module with 2x 10mohm 900V SiC MOSFET switches and 2x 100A 1200V SiC diodes and a thermistor in an F2 package. The SiC MOSFET switches use M2 technology and are driven with 15V-18V gate drive.
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH020U90MNF2PTG |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Tc) | 149 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Max) | 546.4 nC |
| Input Capacitance (Ciss) (Max) | 7007 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Module |
| Power - Max (Tj) | 352 W |
| Rds On (Max) | 14 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 4.3 V |
Pricing
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