CURC306-G

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Comchip Technology

DIODE GEN PURP 800V 3A DO214AB

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Comchip Technology

DIODE GEN PURP 800V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	CURC306-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE GEN PURP 800V 3A DO214AB

Part	Package / Case	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Supplier Device Package	Operating Temperature - Junction	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)
Comchip Technology CURC306-G	DO-214AB, SMC	75 ns	800 V	Surface Mount	200 mA, 500 ns	DO-214AB (SMC)	150 °C	Standard	5 µA	1.7 V	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources

No documents available