FDMC86261P
ActiveON Semiconductor
P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -150V, -9A, 160MΩ
FDMC86261P
ActiveON Semiconductor
P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -150V, -9A, 160MΩ
Description
General part information
FDMC86261P
This P-Channel MOSFET is produced using an advanced PowerTrench®technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC86261P |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 2.7 A |
| Current - Continuous Drain (Id) (Tc) | 9 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 24 nC, 24 nC |
| Input Capacitance (Ciss) (Max) | 1360 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Length | 3.3 mm |
| Package Name | 8-MLP |
| Package Width | 3.3 mm |
| Power Dissipation (Max) | 2.3 W, 40 W |
| Rds On (Max) | 160 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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