D6G-T

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Diodes Inc

DIODE GEN PURP 800V 1A T-1

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Diodes Inc

DIODE GEN PURP 800V 1A T-1

Technical Specifications

Parameters and characteristics for this part

Specification	D6G-T

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	T1, Axial
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	T-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Reverse Recovery Time (trr)	Technology	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr
Diodes Inc D6G-T	2 µs	Standard	Through Hole	T-1	1 A	T1 Axial	Standard Recovery >500ns	200 mA	800 V	1 V	150 °C	-65 C	8 pF	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 800 V 1A Through Hole T-1

Technical documentation and resources