CGD65B130S2-T13
ActiveCambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN5X6.
CGD65B130S2-T13
ActiveCambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN5X6.
Description
General part information
CGD65B130S2-T13
650 V 12A (Tc) Surface Mount 8-DFN (5x6)
Technical Specifications
Parameters and characteristics for this part
| Specification | CGD65B130S2-T13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 12 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 9 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Feature | Current Sensing |
| Gate Charge (Max) | 2.3 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-DFN |
| Package Width | 6 mm |
| Rds On (Max) | 182 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Negative | -1 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 4.2 V |
Pricing
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CAD
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Documents
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