IRFR5410TRRPBF

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Infineon Technologies

MOSFET P-CH 100V 13A DPAK

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Infineon Technologies

MOSFET P-CH 100V 13A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR5410TRRPBF

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	66 W
Rds On (Max) @ Id, Vgs	205 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IRFR5410TRLPBF	58 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	205 mOhm	TO-252AA (DPAK)	Surface Mount	-55 °C	150 °C	66 W	20 V	4 V	MOSFET (Metal Oxide)	100 V	13 A	10 V
Infineon Technologies IRFR5410TRRPBF	58 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	205 mOhm	TO-252AA (DPAK)	Surface Mount	-55 °C	150 °C	66 W	20 V	4 V	MOSFET (Metal Oxide)	100 V	13 A	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly