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onsemi-NTMT190N65S3HF MOSFETs Trans MOSFET N-CH 650V 20A 4-Pin PQFN EP T/R

NTMT190N65S3HF

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 20 A, 190 MΩ, POWER88

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onsemi-NTMT190N65S3HF MOSFETs Trans MOSFET N-CH 650V 20A 4-Pin PQFN EP T/R

NTMT190N65S3HF

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 20 A, 190 MΩ, POWER88

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Description

General part information

NTMT190N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1(MSL 1).Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMT190N65S3HF
Current - Continuous Drain (Id) (Tc)20 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)34 nC
Input Capacitance (Ciss) (Max)1610 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case4-PowerTSFN
Package Length8 mm
Package Name4-PQFN
Package Width8 mm
Power Dissipation (Max)162 W
Rds On (Max)190 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

Pricing

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CAD

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