1SS306TE85LF

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 200V 100MA SC61B

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 200V 100MA SC61B

Technical Specifications

Parameters and characteristics for this part

Specification	1SS306TE85LF

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	1 µA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-61AA
Reverse Recovery Time (trr)	60 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC-61B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

DIODE ARRAY GP 200V 100MA SC61B

Part	Package / Case	Operating Temperature - Junction	Mounting Type	Speed	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
Toshiba Semiconductor and Storage 1SS306TE85LF	SC-61AA	125 °C	Surface Mount	Any Speed	200 mA	SC-61B	1 µA	60 ns	100 mA	2 Independent	200 V	Standard

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General part information

Diode Array 2 Independent 200 V 100mA Surface Mount SC-61AA

Technical documentation and resources

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