NCG225L75NF8M1
ObsoleteON Semiconductor
IGBT 750 V, 225 A FIELD STOP TRENCH GEN4 (FS4) BARE DIE. PAIRING WITH NCD225E75F8M1
NCG225L75NF8M1
ObsoleteON Semiconductor
IGBT 750 V, 225 A FIELD STOP TRENCH GEN4 (FS4) BARE DIE. PAIRING WITH NCD225E75F8M1
Description
General part information
NCG225L75NF8M1 Series
NCG225L75NF8M1 is a 750 V, 224 A rated Field Stop 4 (FS4) Trench IGBT bare die with a die size of 10 mm x 10 mm. it's suitable for back side and double side sintering attachment inside traction module
Technical Specifications
Parameters and characteristics for this part
| Specification | NCG225L75NF8M1 |
|---|---|
| Current - Collector (Ic) (Max) | 225 A |
| Current - Collector Pulsed (Icm) | 675 A |
| Gate Charge | 690 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Die |
| Package Name | Wafer |
| Td (off) @ 25°C | 122 ns |
| Td (on) @ 25°C | 104 ns |
| Test Condition Current | 225 A |
| Test Condition Resistance | 2 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.75 V |
| Voltage - Collector Emitter Breakdown (Max) | 750 V |
Pricing
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