DMN39M1LSSQ-13
ActiveDiodes Inc
30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN39M1LSSQ-13
ActiveDiodes Inc
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN39M1LSSQ-13
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, backlighting, power-management functions, and DC-DC converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN39M1LSSQ-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 42 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 2311 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC, 8-SO |
| Package Width | 3.9 mm |
| Power Dissipation (Max) | 1.4 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 5.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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