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XP50AN1K5I

XP50AN1K5I

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YAGEO

MOSFET N-CH 500V 5A TO220CFM

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XP50AN1K5I

XP50AN1K5I

Active
YAGEO

MOSFET N-CH 500V 5A TO220CFM

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Description

General part information

XP50AN1K5I

MOSFET N-CH 500V 5A TO220CFM

Technical Specifications

Parameters and characteristics for this part

SpecificationXP50AN1K5I
Current - Continuous Drain (Id) (Tc)5 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)24.6 nC
Input Capacitance (Ciss) (Max)800 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220CFM
Power Dissipation (Max)1.92 W, 31.3 W
Rds On (Max)1.55 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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