FCH165N60E
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, EASY DRIVE, 600 V, 23 A, 165 MΩ, TO-247
FCH165N60E
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, EASY DRIVE, 600 V, 23 A, 165 MΩ, TO-247
Description
General part information
FCH165N60E
SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.
Technical Specifications
Parameters and characteristics for this part
| Specification | FCH165N60E |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 23 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 75 nC |
| Input Capacitance (Ciss) (Max) | 2434 pF, 2434 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power Dissipation (Max) | 227 W |
| Rds On (Max) | 0.165 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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