TK9A60D(STA4,Q,M)
ActiveToshiba Semiconductor and Storage
POWER MOSFET, N CHANNEL, 600 V, 9 A, 0.67 OHM, SC-67, THROUGH HOLE
TK9A60D(STA4,Q,M)
ActiveToshiba Semiconductor and Storage
POWER MOSFET, N CHANNEL, 600 V, 9 A, 0.67 OHM, SC-67, THROUGH HOLE
Description
General part information
TK9A60D(STA4,Q,M)
POWER MOSFET, N CHANNEL, 600 V, 9 A, 0.67 OHM, SC-67, THROUGH HOLE
Technical Specifications
Parameters and characteristics for this part
| Specification | TK9A60D(STA4,Q,M) |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 9 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 24 nC, 24 nC |
| Input Capacitance (Ciss) (Max) | 1200 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) | 830 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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