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S29GL512S11DHIV23

S29GL512S11DHIV23

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INFINEON

FLASH MEMORY, PARALLEL NOR, 512 MBIT, 32M X 16BIT, PARALLEL, FBGA, 64 PINS

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S29GL512S11DHIV23

S29GL512S11DHIV23

Active
INFINEON

FLASH MEMORY, PARALLEL NOR, 512 MBIT, 32M X 16BIT, PARALLEL, FBGA, 64 PINS

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Description

General part information

S29GL512S11DHIV23

S29GL512S11DHIV23 is a MIRRORBIT™ Eclipse flash product fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes this device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.

Technical Specifications

Parameters and characteristics for this part

SpecificationS29GL512S11DHIV23
Access Time110 ns
Memory Depth32 M
Memory FormatFLASH
Memory Interface (Type)Parallel
Memory Size512 Mb
Memory TypeNon-Volatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case64-LBGA
Package Length9 mm
Package Name64-FBGA
Package Width9 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)1.65 V
Write Cycle Time - Page60 ns
Write Cycle Time - Word60 ns

Pricing

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