Description
General part information
IPTC039N15NM5ATMA1
IPTC039N15NM5 is part of theOptiMOS™ 5 power MOSFET in TOLTfamily: the TO-Leaded top-side cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS™ 5 technology allows best-in-class products in 150 V as well as high current rating for high-power density designs. With top-side cooling setup, the drain is exposed at the surface of the package enabling 95 percent of the heat to be dissipated to the heatsink, achieving 20 percent better RthJAand 50 percent improved RthJCcompared to TOLL package. With bottom-side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses. OptiMOS™ 5 power MOSFET in TOLT targetspower tools,light electric vehiclesandbattery management systems.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPTC039N15NM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 21 A |
| Current - Continuous Drain (Id) (Tc) | 190 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 93 nC |
| Input Capacitance (Ciss) (Max) | 7300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 16-PowerSOP Module |
| Package Name | PG-HDSOP-16-2 |
| Power Dissipation (Max) | 3.8 W, 319 W |
| Rds On (Max) | 3.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
