MTZJT-779.1B
ObsoleteRohm Semiconductor
DIODE ZENER 9.1V 500MW MSD
MTZJT-779.1B
ObsoleteRohm Semiconductor
DIODE ZENER 9.1V 500MW MSD
Description
General part information
MTZJT-779.1B
DIODE ZENER 9.1V 500MW MSD
Technical Specifications
Parameters and characteristics for this part
| Specification | MTZJT-779.1B |
|---|---|
| Current - Reverse Leakage | 500 nA |
| Impedance (Max) (Zzt) | 20 Ohms |
| Mounting Type | Through Hole |
| Package / Case | DO-34, Axial, DO-204AG |
| Package Name | MSD |
| Power - Max | 0.5 W |
| Tolerance | 3 % |
| Voltage - Zener (Nom) (Vz) | 9.1 V |
Pricing
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CAD
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Documents
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