TK6A53D(STA4,Q,M)
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 525V 6A TO220SIS
TK6A53D(STA4,Q,M)
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 525V 6A TO220SIS
Description
General part information
TK6A53D(STA4,Q,M)
MOSFET N-CH 525V 6A TO220SIS
Technical Specifications
Parameters and characteristics for this part
| Specification | TK6A53D(STA4,Q,M) |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 6 A |
| Drain to Source Voltage (Vdss) | 525 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 600 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 35 W |
| Rds On (Max) | 1.3 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources