AR1FK-M3/I
ActiveVishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1A DO219AB
AR1FK-M3/I
ActiveVishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1A DO219AB
Description
General part information
AR1FK-M3/I
Diode 800 V 1A Surface Mount DO-219AB (SMF)
Technical Specifications
Parameters and characteristics for this part
| Specification | AR1FK-M3/I |
|---|---|
| Capacitance | 9.3 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage | 1 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | DO-219AB |
| Package Name | DO-219AB (SMF) |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 120 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) | 1.6 V |
Pricing
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CAD
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Documents
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