RBA200N15YANS-3UA03#GB0
ActiveRenesas Electronics Corporation
REXFET-1 N-CH MOSFET 150V, 200A,
RBA200N15YANS-3UA03#GB0
ActiveRenesas Electronics Corporation
REXFET-1 N-CH MOSFET 150V, 200A,
Description
General part information
RBA200N15YANS-3UA03#GB0
REXFET-1 N-CH MOSFET 150V, 200A,
Technical Specifications
Parameters and characteristics for this part
| Specification | RBA200N15YANS-3UA03#GB0 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 200 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 86 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 6200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | Toll |
| Power Dissipation (Max) | 366 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 3.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.7 V |
Pricing
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