TK3A60DA(Q,M)
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 600V 2.5A TO220SIS
TK3A60DA(Q,M)
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 600V 2.5A TO220SIS
Description
General part information
TK3A60DA(Q,M)
MOSFET N-CH 600V 2.5A TO220SIS
Technical Specifications
Parameters and characteristics for this part
| Specification | TK3A60DA(Q,M) |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 2.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9 nC |
| Input Capacitance (Ciss) (Max) | 380 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 30 W |
| Rds On (Max) | 2.8 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.4 V |
Pricing
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CAD
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