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ONSEMI MMBZ18VALT1G.

IRLML0030TRPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 30 V, 5.3 A, 0.022 OHM, SOT-23, SURFACE MOUNT

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ONSEMI MMBZ18VALT1G.

IRLML0030TRPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 30 V, 5.3 A, 0.022 OHM, SOT-23, SURFACE MOUNT

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Description

General part information

IRLML0030TRPBF

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLML0030TRPBF
Current - Continuous Drain (Id) (Ta)5.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)2.6 nC
Input Capacitance (Ciss) (Max)382 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameMicro3™/SOT-23
Power Dissipation (Max)1.3 W
Rds On (Max)27 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.3 V

Pricing

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