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SI2309DS-T1-E3

SI2309DS-T1-E3

Obsolete
Vishay Dale

MOSFET P-CH 60V 1.25A SOT23-3

Find alt
SI2309DS-T1-E3

SI2309DS-T1-E3

Obsolete
Vishay Dale

MOSFET P-CH 60V 1.25A SOT23-3

Find alt

Description

General part information

SI2309DS-T1-E3

MOSFET P-CH 60V 1.25A SOT23-3

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2309DS-T1-E3
Current - Continuous Drain (Id) (Ta)1.25 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)12 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power Dissipation (Max)1.25 W
Rds On (Max)340 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1 V

Pricing

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