Description
General part information
ISC007N04NM6ATMA1
With this best-in-classOptiMOSTM6power MOSFET 40V normal level, Infineon offers a benchmark solution for normal level (higher threshold voltage) required applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher Vthfor the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on. In addition, lower QGD/QGSratios (CGD/CGSdivider ratio) reduce the gate voltage spikes' peak, further contributing to the robustness against unwanted turn-on. The ISC007N04NM6 features very low RDS(on)of 0.7mOhm.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC007N04NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 48 A |
| Current - Continuous Drain (Id) (Tc) | 381 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 117 nC |
| Input Capacitance (Ciss) (Max) | 8400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8 FL |
| Power Dissipation (Max) | 188 W, 3 W |
| Rds On (Max) | 0.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.8 V |
Pricing
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CAD
3D models and CAD resources for this part